With almost 1,000 commercial references in clusters of Schottky and ultrafast devices, ST is able to provide customers with devices able to achieve the highest level of efficiency and performance:
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The avalanche rating and multiple technology trade-offs enable up to 2% of power saving |
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Ultrafast and tandem diodes offer advanced and well-proven solutions for efficient industrial equipment, and reliable plasma display panels |
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Silicon carbide pushes out the power density barrier within SMPSs |
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The latest devices housed in micro-packages further reduce the application volume in portable computer and consumer equipment produced in large quantities |
Low Losses & High Power Density:
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Product range optimization with voltage rating up to 170 V and STTH up to 1200 V for the mainstream power devices, completed with signal Schottky diodes for routing, RF, and logical functions |
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Breakthrough solutions. From tandem diodes and energy-recovery diodes for PDPs to newly introduced silicon carbide diodes |
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| Diodes Families |
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| New Products |
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| Brochures and Product Guides |
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| Product News |
Press Announcement November 13, 2006:
STMicroelectronics
and Velox Semiconductor to Launch GaN Schottky Diodes for Power
Applications |
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| Related Information |
Simulation Models
SPICE
& PSPICE Models (ZIP 100K) |
Application Note
AN2025
- Converter improvement using Schottky rectifier avalanche
specification (PDF 148K)
AN1768
- Admissible avalanche power of Schottky diodes (PDF 45K) |
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